Techniques useful in fabricating semiconductor devices...

Details Techniques useful in fabricating semiconductor devices... Techniques useful in fabricating semiconductor devices...

H - Electricity

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H01L 21/00 (2006.01) H01L 21/033 (2006.01) H01L 21/205 (2006.01) H01L 21/28 (2006.01) H01L 21/76 (2006.01)

Patent

CA 1299770

- 8 - TECHNIQUES USEFUL IN FABRICATING SEMICONDUCTOR DEVICES HAVING SUBMICRON FEATURES Abstract Submicron resolution in the fabrication of transistors is obtained by using sidewall techniques. The techniques described remove the sidewalls after an oxidation step and the openings so formed by the removal are used as a mask for subsequent substrate modification by either diffusion or ion implantation.

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