Fabrication of mesa devices by mbe growth over channeled...

Details Fabrication of mesa devices by mbe growth over channeled... Fabrication of mesa devices by mbe growth over channeled...

H - Electricity

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H01L 21/203 (2006.01) H01L 21/306 (2006.01)

Patent

CA 1102903

FABRICATION OF MESA DEVICES BY MBE GROWTH OVER CHANNELED SUBSTRATES Abstract of the Disclosure Parallel channels are separated by ridges formed in a semiconductor body in such a way that each channel is wider at its base than at its top. Molecular beam epitaxy is used to deposit semiconductor layers on the ridges and in the channels. Because each channel is narrower at its top than at its base, the configuration is essentially self- masking. That is, the layers in the channel are physically separate from those on the ridges, as would be metallic contacts deposited on the layers. This technique is employed in the fabrication of a plurality of self-aligned, stripe geometry, mesa double heterostructure junction lasers.

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