H - Electricity – 01 – L
Inventor
H - Electricity
01
L
Inventor
Country: United States Of America
Doping epitaxial films by the molecular beam method
Fabrication of mesa devices by mbe growth over channeled...
Floating gate vertical fet
Ingaas field effect transistor
Majority carrier photodetector
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Profile ID: LFCA-PAI-P-225019