Ingaas field effect transistor

Details Ingaas field effect transistor Ingaas field effect transistor

H - Electricity

01

L

356/149

H01L 29/78 (2006.01) H01L 29/201 (2006.01) H01L 29/51 (2006.01)

Patent

CA 1196111

- 12 - InGaAs FIELD EFFECT TRANSISTOR Abstract InGaAs FETs using a silicon nitride layer, between the metal and the channel layer reduce the gate leakage current and yield desirable FET characteristics, particularly high transconductance.

421665

Affiliated with

Also associated with

Rating

Ingaas field effect transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Ingaas field effect transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ingaas field effect transistor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1219832