Field effect transistor with insulated gate electrode

Details Field effect transistor with insulated gate electrode Field effect transistor with insulated gate electrode

H - Electricity

01

L

356/126

H01L 29/78 (2006.01) H01L 29/10 (2006.01)

Patent

CA 1134056

26-2-1979 1 PHN 9189 ABSTRACT: "Field effect transistor with insulated gate electrode". A field effect transistor of the type V-MOST in which the channel region comprises a more highly doped part which adjoins the source zone and a lower doped part which surrounds said region, adjoins the surface and is surrounded by an insulation diffusion. According to the invention the lower-doped part is depleted from the p-n junction with the low-doped drain region up to the surface at a voltage which is lower than the breakdown voltage.

332196

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