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Francois M. Klaassen

H - Electricity – 01 – L

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Country: Netherlands

Field effect transistor with insulated gate electrode

H - Electricity – 01 – L
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Integrated circuit comprising complementary field effect...

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Method of manufacturing an insulated gate field effect...

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Semiconductor device having narrow coplanar silicon electrodes

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Profile ID: LFCA-PAI-P-698028

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