Method of manufacturing an insulated gate field effect...

Details Method of manufacturing an insulated gate field effect... Method of manufacturing an insulated gate field effect...

H - Electricity

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H01L 21/265 (2006.01) H01L 21/033 (2006.01) H01L 21/336 (2006.01) H01L 29/08 (2006.01) H01L 29/423 (2006.01) H01L 29/78 (2006.01)

Patent

CA 1206625

14 ABSTRACT: A method of manufacturing a field effect device, the source and drain zones of which (15,16) have exten- sions (12,13) of an accurately and reproducibly determined length adjoining the gate electrode (4A). According to the invention, on a first silicon layer (4), from which the gate electrode is to be formed, there is provided an oxidation-preventing layer (5) and thereon a second sili- con layer (6). A part of the second silicon layer (6) is removed, the edges of which part substantially coincide with those of the gate electrode to be formed. The edges (8) of the remaining part of the second silicon layer are oxidized. Through successive maskless selective etching steps, the first silicon layer (4) is exposed and etched away at the area of the oxidized edge portions (8). through the openings (11) thus obtained, the extensions of the source and drain zones (12,13) are implanted.

431567

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