Integrated circuit comprising complementary field effect...

Details Integrated circuit comprising complementary field effect... Integrated circuit comprising complementary field effect...

H - Electricity

01

L

356/126

H01L 27/04 (2006.01)

Patent

CA 1221770

23 ABSTRACT: An integrated circuit comprising complementary field effect transistors (19A,20,21 and 19B,22,23), which are both of the normally-off depletion type. These transistors have in the channel region a surface layer (36,37) which has the same conductivity type as the adjoining source and drain zones (20,21 and 22,233. The surface layers (36,37) comprise per unit surface area a quantity of dopant which is at least equal to the charge per unit surface area in the part of the substrate region which adjoins the surface layer and which is depleted if between gate electrode and source and drain zones the threshold voltage is applied. The gate elec- trodes (19A,19B) comprise semiconductor material of opposite conductivity types.

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