Focused ion beam implantation apparatus

Details Focused ion beam implantation apparatus Focused ion beam implantation apparatus

H - Electricity

01

J

H01J 37/317 (2006.01) H01J 37/147 (2006.01) H01J 37/305 (2006.01)

Patent

CA 2099685

A focused ion beam implantation apparatus comprises a vacuum chamber, an ion source generating an ion beam, a means for accelerating the ion beam, a means for eliminating unwanted ion species in the ion beam, and a means for focusing the ion beam on a target. The apparatus further includes a means for scanning the ion beam relative to the target and means for inclining the ion beam relative to the target.

L'invention est un appareil d'implantation d'ions utilisant un faisceau d'ions concentré. Cet appareil comprend une chambre à vide, une source d'ions, un dispositif d'accélération d'ions, un dispositif d'élimination d'ions parasites et un dispositif de concentration des ions en un faisceau. Il comprend également un dispositif permettant de balayer une cible avec le faisceau et d'incliner celui-ci par rapport à cette cible.

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