H - Electricity – 01 – L
Patent
H - Electricity
01
L
356/178, 345/28,
H01L 21/363 (2006.01) C30B 29/10 (2006.01) H01L 21/365 (2006.01) H01L 31/02 (2006.01) H01L 31/0296 (2006.01) H01L 31/0392 (2006.01) H01L 31/068 (2006.01) H01L 31/18 (2006.01)
Patent
CA 1333356
There is provided a functional ZnSe:H deposited film composed of zinc atoms, selenium atoms, and at least hydrogen atoms, with the content of hydrogen atoms being 1 to 4 atomic% and the ratio of crystal grains per unit volume being 65 to 85 vol%. It is capable of efficient doping and is stable to irradiation. It can be made into a high conductivity p-type of n-type ZnSe:H:M film by doping. It can be efficiently deposited on a non-single crystal substrate such as metal, glass, and synthetic resin which was incapable of efficient depositing. Thus the invention makes it possible to form a high-functional device such as a photovoltaic element of ZnSe film on a non-single crystal substrate.
572578
Arao Kozo
Fujioka Yasushi
Ishihara Shunichi
Kanai Masahiro
Nakagawa Katsumi
Canon Kabushiki Kaisha
Ridout & Maybee Llp
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