4. G - Physics
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Katsumi Nakagawa

G - Physics – 03 – G

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Country: Japan

Amorphous oxide and field effect transistor

H - Electricity – 01 – L
Patent

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Amorphous oxide and field effect transistor

H - Electricity – 01 – L
Patent

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Amorphous oxide and field effect transistor

H - Electricity – 01 – L
Patent

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Electrophotographic photosensitive layer including amorphous...

G - Physics – 03 – G
Patent

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Field effect transistor employing an amorphous oxide

H - Electricity – 01 – L
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Profile ID: LFCA-PAI-P-173940

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