Field effect transistor employing an amorphous oxide

Details Field effect transistor employing an amorphous oxide Field effect transistor employing an amorphous oxide

H - Electricity

01

L

H01L 29/772 (2006.01) H01L 29/78 (2006.01) H01L 21/363 (2006.01) H01L 29/786 (2006.01)

Patent

CA 2585071

A novel field-effect transistor is provided which employs an amorphous oxide. In an embodiment of the present invention, the transistor comprises an amorphous oxide layer containing electron carrier at a concentration less than 1 ~10-18/cm3, and the gate-insulating layer is comprised of a first layer being in contact with the amorphous oxide and a second layer different from the first layer.

L'invention concerne un nouveau transistor à effet de champ utilisant un oxyde amorphe. Dans un mode de réalisation, l'invention concerne un transistor comprenant une couche d'oxyde amorphe qui contient un porteur d'électrons à une concentration inférieure à 1x10-18/cm3, et une couche d'isolation de grille composée d'une première couche en contact avec l'oxyde amorphe et d'une seconde couche différente de la première.

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