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Masafumi Sano

G - Physics – 03 – G

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Country: Japan

Amorphous oxide and field effect transistor

H - Electricity – 01 – L
Patent

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Amorphous oxide and field effect transistor

H - Electricity – 01 – L
Patent

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Amorphous oxide and field effect transistor

H - Electricity – 01 – L
Patent

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Field effect transistor employing an amorphous oxide

H - Electricity – 01 – L
Patent

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Light receiving member having a multilayered light receiving...

G - Physics – 03 – G
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Profile ID: LFCA-PAI-P-1199147

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