Amorphous oxide and field effect transistor

H - Electricity – 01 – L

Patent

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Details

H01L 29/78 (2006.01) H01L 29/12 (2006.01) H01L 29/786 (2006.01) C01G 9/02 (2006.01) C01G 15/00 (2006.01) C01G 19/02 (2006.01) H01L 21/203 (2006.01)

Patent

CA 2708337

A novel amorphous oxide applicable, for example, to an active layer of a TFT is provided. The amorphous oxide comprises microcrystals.

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