Amorphous oxide and field effect transistor

Details Amorphous oxide and field effect transistor Amorphous oxide and field effect transistor

H - Electricity

01

L

H01L 29/786 (2006.01) H01L 21/363 (2006.01) H01L 21/428 (2006.01) C01G 9/02 (2006.01) C01G 15/00 (2006.01) C01G 19/02 (2006.01)

Patent

CA 2585190

A novel amorphous oxide applicable, for example, to an active layer of a TFT is provided. The amorphous oxide comprises microcrystals.

L'invention concerne un nouvel oxyde amorphe convenant par exemple pour former la couche active d'un transistor TFT. Cet oxyde amorphe comprend des microcristaux.

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