Gallium arsenide single crystals with low dislocation...

Details Gallium arsenide single crystals with low dislocation... Gallium arsenide single crystals with low dislocation...

C - Chemistry, Metallurgy

30

B

148/3.8

C30B 15/02 (2006.01) C30B 15/00 (2006.01) C30B 15/20 (2006.01) C30B 29/42 (2006.01)

Patent

CA 1277576

ABSTRACT Undoped GaAs single crystals with low dislocation density, low impurity content, 0,20 - 1 Kg in weight and constant diameter of 1"-2" (inches), said single crystals being obtained with LEC technology at low or high pressure with synthesis of the polycrystal in situ and subsequent growth of the single crystal.

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