H - Electricity – 01 – J
Patent
H - Electricity
01
J
H01J 1/62 (2006.01) C09K 11/77 (2006.01) H01L 33/00 (2006.01)
Patent
CA 2362956
The present invention is a GaN semiconductor crystal that is doped with at least one RE ion, wherein the structure has been annealed at a temperature of at least about 1,000 degrees Celsius. As a result, the structure is preferably adapted to provide a luminescence spectra over the range from about 380 nanometers to about 1000 nanometers when excited by a suitable excitation. The present invention also includes apparatus and methods for producing cathodoluminescence and electroluminescence that may be suitable for use in any of a wide variety of optoelectronic devices.
La présente invention concerne un cristal GaN semi-conducteur dopé avec au moins un ion de terres rares, dont la structure a subi un recuit à une température d'au moins 1000 degrés Celsius. Il en résulte une structure qui, lorsqu'elle subit une excitation adéquate, permet d'obtenir un spectre de luminescence compris entre environ 380 nanomètres et environ 1000 nanomètres. La présente invention concerne aussi un appareil et des procédés qui permettent de mettre en oeuvre l'électroluminescence et la cathodoluminescence et peuvent convenir à l'usage dans un grand nombre de dispositifs optoélectroniques.
Jadwisienczak W. M.
Lozykowski Henryk J.
Ohio University
Smart & Biggar
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