Gan selective growth on sic substrates by ammonia-source mbe

Details Gan selective growth on sic substrates by ammonia-source mbe Gan selective growth on sic substrates by ammonia-source mbe

H - Electricity

01

L

H01L 21/36 (2006.01) C30B 23/02 (2006.01) H01L 21/20 (2006.01)

Patent

CA 2351123

A method is described for selectively depositing a GaN epitaxial layer on a substrate. The substrate is first patterned with a seed layer, preferably of AlN, and then the GaN epitxial layer is grown on the resulting patterned substrate by molecular beam epitaxy (MBE) such that growth occurs selectively over the seed layer.

On décrit une méthode pour déposer sélectivement une couche épitaxiale GaN sur un substrat. Le substrat est d'abord calqué au moyen d'une couche germe, de préférence d'AlN, puis la couche épitaxiale GaN est cultivée sur le substrat calqué résultant par épitaxie par faisceaux moléculaires (MBE) de manière à assurer une croissance sélective sur la couche germe.

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