Gan single crystalline substrate and method of producing the...

Details Gan single crystalline substrate and method of producing the... Gan single crystalline substrate and method of producing the...

H - Electricity

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H01L 21/20 (2006.01) C30B 25/02 (2006.01) H01L 21/203 (2006.01) H01L 21/205 (2006.01) H01L 21/208 (2006.01) H01S 5/02 (2006.01) H01S 5/323 (2006.01) H01L 33/00 (2006.01)

Patent

CA 2311132

The method of making a GaN single crystal substrate comprises a mask layer forming step of forming on a GaAs substrate 2 a mask layer 8 having a plurality of opening windows 10 disposed separate from each other; and an epitaxial layer growing step of growing on the mask layer 8 an epitaxial layer 12 made of GaN.

L'invention concerne un procédé de production d'un substrat monocristallin de GaN, caractérisé en ce qu'il consiste à former une couche de masquage (8) présentant plusieurs fenêtres d'ouverture (10), espacées les unes des autres, sur un substrat de GaAs (2), puis à faire croître une couche épitaxiale (12) de GaN sur la couche de masquage (8).

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