Gas mixtures for the vapor deposition of semiconductor material

Details Gas mixtures for the vapor deposition of semiconductor material Gas mixtures for the vapor deposition of semiconductor material

H - Electricity

01

L

31/193, 204/96.3

H01L 21/205 (2006.01)

Patent

CA 1279471

ABSTRACT Precursor gaseous mixtures from which wide and narrow band gap semiconductor alloy material may be deposited by a glow discharge process, said material characterized by improved photoconductivity and stability. There is also disclosed a method of fabricating a narrow band gap semiconductor that avoids differential depletion of the components of the precursor gaseous mixture.

504280

Affiliated with

Also associated with

Rating

Gas mixtures for the vapor deposition of semiconductor material does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Gas mixtures for the vapor deposition of semiconductor material, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Gas mixtures for the vapor deposition of semiconductor material will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1297307