Gaseous plasma etching of aluminum and aluminum oxide

Details Gaseous plasma etching of aluminum and aluminum oxide Gaseous plasma etching of aluminum and aluminum oxide

B - Operations, Transporting

23

K

148/26, 204/96.0

B23K 7/08 (2006.01) C23F 4/00 (2006.01)

Patent

CA 1059882

GASEOUS PLASMA ETCHING OF ALUMINUM AND ALUMINUM OXIDE Abstract of the Disclosure Gaseous plasma etching of aluminum with conventional plasma etch gases has not hitherto been commercially possible due to a layer of aluminum oxide (Al2O3) which forms on freshly prepared aluminum surfaces. By first plasma etching in the presence of a gaseous trihalide, preferably in a so-called "pancake" or radial-flow-type reactor, the oxide layer is removed. Aluminum etching can then continue, either with or without plasma conditions, depending upon the etch gas used. - i -

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