Gate turn-off thyristor

Details Gate turn-off thyristor Gate turn-off thyristor

H - Electricity

01

L

356/161

H01L 29/36 (2006.01) H01L 21/332 (2006.01) H01L 29/08 (2006.01) H01L 29/744 (2006.01)

Patent

CA 1126412

ABSTRACT OF THE DISCLOSURE A gate turn-off thyristor of a short-circuited emitter configuration comprises a semiconductor sub- strate of a PE-NB-PB-NE four-layer structure, wherein a PE-layer is short-circuited through a NB-layer and an anode. The NB-layer includes heavily doped regions to which the anode is ohmic contacted with a low resistance. The PE-layer is provided at a location at least covered by a projection of the NE-layer. The thickness of the heavily doped regions is greater than that of the PE-layer. The improved structure assures satisfactory gate turn-off characteristics, although the semiconductor substrate is not doped with a life time killer impurity.

335501

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