C - Chemistry – Metallurgy – 03 – C
Patent
C - Chemistry, Metallurgy
03
C
C03C 17/245 (2006.01) C03C 17/00 (2006.01) C23C 14/22 (2006.01) C23C 14/50 (2006.01) G02B 1/10 (2006.01)
Patent
CA 2237732
A method of making vapor deposited thin films by rotating a substrate in the presence of an obliquely incident vapor flux. The substrate is rotated about an axis normal to the surface of the substrate while depositing a vapor flux, and then paused while depositing vapor flux to cause columns of a thin film to grow obliquely. The resulting thin film exhibits a porosity that is not dependent on the column angle of the resulting thin films.
Brett Michael J.
Robbie Kevin J.
Alberta Microelectronic Corporation
Lambert Anthony R.
Micralyne Inc.
The Governors Of The University Of Alberta
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