Glass frits containing wo.sub.3 or moo.sub.3 in...

C - Chemistry – Metallurgy – 03 – C

Patent

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31/138, 261/17,

C03C 4/14 (2006.01) H01C 7/06 (2006.01) H01C 17/065 (2006.01)

Patent

CA 1194042

Abstract of the Disclosure This invention is concerned with the fabrication of thick film, RuO2-based resistors. More specifically, this invention is directed to the formulation of glass frits for use in such resistors exhibiting temperature coefficient of resistance values of less than 100 ppm. Such glass frits consist essentially, expressed in terms of mole percent on the oxide basis, of about 32-39% PbO, 44-47% B2O3, 14-17% SiO2, and an effective amount up to 5% of WO3 or MoO3.

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