High density semiconductor structure and method of making...

Details High density semiconductor structure and method of making... High density semiconductor structure and method of making...

H - Electricity

01

L

356/154

H01L 21/4763 (2006.01) H01L 23/48 (2006.01) H01L 23/535 (2006.01)

Patent

CA 2004075

- 23 - HIGH DENSITY SEMICONDUCTOR STRUCTURE AND METHOD OF MAKING THE SAME Abstract of the Invention A method of forming a high density semiconductor structure including one or more buried metal layers. One or more metal layers may be formed on a first semiconductor substrate, with the metal layer or layers being insulated from one another and from the substrate. One or more metal layers may be formed on the surface of a second substrate which may or may not be a semiconductor substrate. The topmost metal layers, either or both of which may have an insulating layer thereon, are placed in contact and heated in an oxidizing ambient atmosphere to form a bond therebetween. One or more visas connect the buried metal layers to the active devices in the substrates. The buried metal layers may form buried power and ground planes and buried metallization patterns for device interconnection.

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