High impedance plasma ion implantation method and apparatus

Details High impedance plasma ion implantation method and apparatus High impedance plasma ion implantation method and apparatus

H - Electricity

01

J

H01J 37/317 (2006.01) H01J 37/32 (2006.01) H01L 21/265 (2006.01)

Patent

CA 2102384

A high dose rate, high impedance plasma ion implantation method and apparatus to apply high voltage pulses to a target cathode (6) within an ionization chamber (2) to both sustain a plasma in the gas surrounding the target, and to implant ions from the plasma into the target (6) during at least a portion of each pulse (18). Operating at voltages in excess of 50kV that are too high for the reliable formation of a conventional glow discharge, the plasma is instead sustained through a beam-plasma instability interaction between secondary electrons emitted from the target (6) and a background pulsed plasma. The voltage pulses are at least about 50kV, and preferably 100kV or more. Pulse durations are preferably less than 8 microseconds, with a frequency in the 50-1,000Hz range. The preferred gas pressure range is 1x10 -4 - 1x10 -3 Torr; auxiliary electrodes (24a, 24b) can be used at the lower pressures to provide sufficient seed electrons for initiating a plasma, which is sustained by the beam-plasma instability interaction.

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