4. H - Electricity
  5. 01
  6. J

Dan M. Goebel

H - Electricity – 01 – J

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Country: United States Of America

High impedance plasma ion implantation method and apparatus

H - Electricity – 01 – J
Patent

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Ion implantation and surface processing method and apparatus

H - Electricity – 01 – J
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Plasma source arrangement for ion implantation

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Profile ID: LFCA-PAI-P-1520567

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