H - Electricity – 01 – J
Patent
H - Electricity
01
J
H01J 37/317 (2006.01) C23C 14/48 (2006.01) H01J 37/32 (2006.01) H01L 21/265 (2006.01)
Patent
CA 2052543
A capacitor (58) is charged to a high potential or voltage from a power source (52). A plasma switch, (56) preferably a CROSSATRON modulator switch, is periodically closed and opened to discharge the capacitor (58) into an object (12) for implantation with ions from a plasma (19) in a plasma source ion implantation apparatus (10). The periodic discharge results in the application of high voltage negative pulses to the object (12), causing ions from the plasma (19) to be accelerated toward, and implant- ed into the object (12). A pulse transformer (92) is preferably provided between the plasma switch (56) and capacitor (58), and the object (12) to step up the voltage of the pulses and enable the plasma switch (56) to operate at lower voltage levels. The plasma switch (56) enables high duty factor and power operation, and may be combined with arc detection and suppression circuitry (64) to prevent arcing between the object (12) and plasma (19). A second power source (52), capacitor (58), and plasma switch (56) may be provided to apply positive pulses to the object (12) in alternation with the negative pulses to cause generation of the plasma, or to accelerate electrons into the object (12) for performing thermally assisted ion implantation, surface annealing, and the like.
Goebel Dan M.
Matossian Jesse N.
Hughes Electronics Corporation
Sim & Mcburney
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