High k plzt ceramic capacitor and method for making

Details High k plzt ceramic capacitor and method for making High k plzt ceramic capacitor and method for making

H - Electricity

01

G

334/22.1, 334/7.

H01G 4/12 (2006.01) H01B 3/12 (2006.01)

Patent

CA 1154835

HI&H K PLZT CERAMIC CAPACITOR AND METHOD FOR MAKING Abstract of the Disclosure A powder blend of precursors of a single anti- ferroelectric compound of lead-barium-lanthanum-zirconate titanate doped with silver, includes at least 0.7 mole percent bismuth permitting a near-full reaction to be achieved at calcining at 1000°C to 1130°C. A body formed of the pulverized calcined material is then sintered in a closed container at 1100°C. The body is then annealed in open atmosphere at 950°C so as to drive out the free PbO remaining in the body, thereby providing an excellent dielectric having an unusual combination of high K and low TCC.

380989

Affiliated with

Also associated with

Rating

High k plzt ceramic capacitor and method for making does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with High k plzt ceramic capacitor and method for making, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High k plzt ceramic capacitor and method for making will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-671692