High voltage diode structures and method for their preparation

Details High voltage diode structures and method for their preparation High voltage diode structures and method for their preparation

H - Electricity

01

L

356/182

H01L 21/306 (2006.01) C30B 13/06 (2006.01)

Patent

CA 1165469

16 49,113 ABSTRACT OF THE DISCLOSURE This invention provides for mounting a single- crystal doped boule of silicon in a float zone apparatus. A vacuum or other ambient is established within the appar- atus and an rf coil is passed along the boule's length. The rf power is such that the boule is melted to depth "d" which is less than the diameter of the boule. Dopant within the molten depth "d", diffuses to the surface of the melt and evaporates, thereby leaving upon resolid- ification a relatively high resistivity single crystal sheath along the length of the boule. Wafers cut from the boule can be used for making semiconductor devices with a high resistivity edge portion, thereby providing a device with a high breakdown voltage without the need for field rings, beveling or coating.

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