H - Electricity – 01 – L
Inventor
H - Electricity
01
L
Inventor
Country: United States Of America
High voltage diode structures and method for their preparation
Method of controlled, uniform doping of floating zone silicon
Semi-insulating silicon carbide without vanadium domination
Sic bipolar semiconductor devices with few crystal defects
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Profile ID: LFCA-PAI-P-987903