Method of controlled, uniform doping of floating zone silicon

Details Method of controlled, uniform doping of floating zone silicon Method of controlled, uniform doping of floating zone silicon

C - Chemistry, Metallurgy

30

B

148/1.6

C30B 13/00 (2006.01) C30B 13/10 (2006.01)

Patent

CA 1237641

14 ABSTRACT OF THE DISCLOSURE A two-step process for fabricating impurity doped float-zoned single crystal silicon boules which exhibit substantially controlled and uniform concentra- tions of the impurity is disclosed. This process, when applied to polycrystalline silicon rods in a controlled environment of oxygen results in the production of high purity float-zoned silicon crystals with substantially uniform oxygen concentrations of up to 32 ppma which are not currently attainable utilizing the conventional Czochralski silicon boule fabrication methods of the semiconductor industry.

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