Sic bipolar semiconductor devices with few crystal defects

Details Sic bipolar semiconductor devices with few crystal defects Sic bipolar semiconductor devices with few crystal defects

H - Electricity

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H01L 21/04 (2006.01) H01L 29/24 (2006.01) H01L 29/73 (2006.01) H01L 29/732 (2006.01) H01L 29/74 (2006.01) H01L 29/744 (2006.01) H01L 29/861 (2006.01)

Patent

CA 2457399

A bipolar device (30) has at least one p-type layer (34) of single crystal silicon carbide and at least one n-type layer (33) of single crystal silicon carbide, wherein those portions of those stacking faults (40) that grow under forward operation are segregated from at least one of the interfaces between the active region and the remainder of the device.

La présente invention concerne un dispositif bipolaire (30) ayant au moins une couche de type p (34) de carbure de silicium monocristallin et au moins une couche de type n (33) de carbure de silicium monocristallin, grâce auquel les parties des défauts d'empilement (40) apparaissant, lors de l'application d'une tension directe, sont séparées d'au moins une des interfaces venant entre la zone active et le reste du dispositif.

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