H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 29/78 (2006.01) C30B 23/00 (2006.01) C30B 29/36 (2006.01) H01L 29/24 (2006.01) H01L 29/778 (2006.01) H01L 29/812 (2006.01)
Patent
CA 2446818
A semi-insulating bulk single crystal of silicon carbide is disclosed that has a resistivity of at least 5000 .OMEGA.-cm at room temperature and a concentration of trapping elements that create states at least 700 meV from the valence or conduction band that is below the amounts that will affect the resistivity of the crystal, preferably below detectable levels. A method of forming the crystal is also disclosed, along with some resulting devices that take advantage of the microwave frequency capabilities of devices formed using substrates according to the invention.
L'invention concerne un monocristal formant substrat semi-isolant de carbure de silicium, qui présente une résistivité d'au moins 5000 .OMEGA.- cm à température ambiante et une concentration d'éléments de piégeage qui crée des états d'au moins 700 meV à partir de la bande de valence ou de conduction, qui est inférieure aux quantités qui vont affecter la résistivité du cristal, et de préférence, inférieure à des niveaux détectables. L'invention traite d'un procédé de formation du cristal, avec certains dispositifs qui tirent profit des capacités des hyperfréquences des dispositifs obtenus à l'aide des substrats selon l'invention.
Brady Mark
Carter Calvin H. Jr.
Hobgood Hudson M.
Mueller Stephan
Tsvetkov Valeri F.
Cree Inc.
Sim & Mcburney
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