Hydrogen etching of semiconductors and oxides

Details Hydrogen etching of semiconductors and oxides Hydrogen etching of semiconductors and oxides

C - Chemistry, Metallurgy

03

C

148/3.2

C03C 15/00 (2006.01) H01L 21/306 (2006.01) H01L 21/3065 (2006.01) H01L 21/311 (2006.01) H01L 21/3213 (2006.01)

Patent

CA 1184478

HYDROGEN ETCHING OF SEMICONDUCTORS AND OXIDES Abstract Atomic hydrogen, typically produced in a plasma, etches a wide range of materials, including III-V materials and their oxides. GaAs oxide is etched at a faster rate than GaAs, for example, providing significant possibilities for processing integrated circuits and other devices. Silicon is etched preferentially as compared to silicon dioxide or silicon nitride. Native oxides are also conveniently removed by this method prior to other processing steps.

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