Insulating film for semiconductor device and semiconductor...

Details Insulating film for semiconductor device and semiconductor... Insulating film for semiconductor device and semiconductor...

H - Electricity

01

L

H01L 21/31 (2006.01) H01L 23/532 (2006.01)

Patent

CA 2258731

To provide an insulating film having a low dielectric constant and performance sufficient as an interlayer insulating film of a semiconductor device, and a semiconductor device using the insulating film. An insulating film for a semiconductor device used as an interlayer insulating film of a semiconductor device, the insulating film consisting essentially of poly-.alpha.,.alpha.-difluoroparaxylylene and having a relative dielectric constant of from 2.1 to 2.7. An insulating film for a semiconductor device used as an interlayer insulating film of a semiconductor device, the insulating film consisting essentially of poly-.alpha.,.alpha.-difluoroparaxylylene and exhibiting a step coverage of from 0.4 to 0.9. An insulating film for a semiconductor device capable of being filled in a gap, the insulating film consisting essentially of poly-.alpha.,.alpha.-difluoroparaxylylene, having a ratio (D/L) of a depth (D) and an opening width (L) of 1 or more.

Affiliated with

Also associated with

Rating

Insulating film for semiconductor device and semiconductor... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Insulating film for semiconductor device and semiconductor..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Insulating film for semiconductor device and semiconductor... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1935605