H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 39/22 (2006.01) H01L 39/24 (2006.01)
Patent
CA 2166817
In a Josephson device which can be employed as a sensor including superconductor for measuring an extremely weak magnetic field, a Josephson junction consisting of supercon- ducting material is formed, and a covering layer consisting of ordinary conducting metal or semiconductor is formed on the Josephson junction. This enables the Josephson junction to be isolated from the oxidized atmosphere. Further, the covering layer is not to present any deterioration such as cracks even upon being subjected to a thermal hysteresis from very low temperature to ordinary temperature.
Cellule de mémoire à effet Josephson pouvant servir de capteur, comprenant un supraconducteur permettant de mesurer un champ magnétique extrêmement faible. Une cellule de mémoire à effet Josephson constituée d'un matériau supraconducteur est recouverte d'une couche de couverture composée d'un métal conducteur ordinaire ou d'un semi-conducteur, ce qui a pour effet d'isoler la cellule de mémoire à effet Josephson de l'atmosphère oxydée. La couche de couverture ne doit présenter aucun signe de détérioration, comme des fissures, même lorsqu'elle est soumise à une hystérésis thermique allant de très basses températures à des températures ordinaires.
Fujita Satoshi
Tamura Itsuro
Wada Masao
Marks & Clerk
Osaka Gas Company Limited
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