K cell type vapor source having an improved shutter

Details K cell type vapor source having an improved shutter K cell type vapor source having an improved shutter

C - Chemistry, Metallurgy

30

B

C30B 35/00 (2006.01) C30B 23/06 (2006.01)

Patent

CA 2153754

This invention relates to a K cell type vapor source used for film deposition by a MBE method and a reactive co-evaporation. The K cell comprises a crucible, a small orifice above the crucible through which the crucible emits a molecular beam, and a shutter which substantially opens and closes the small orifice so as to control the molecular beam. According to the present invention, the crucible radiates sufficient heat so as to prevent overheating when the shutter is closed so that the crucible emits a stable molecular beam immediately after the shutter is opened.

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