Laminated semiconductor ceramic capacitor with a grain...

H - Electricity – 01 – G

Patent

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H01G 4/12 (2006.01)

Patent

CA 2058410

A laminated semiconductor ceramic capacitor with a grain boundary-insulated structure comprises a semiconductor ceramic block with a grain boundary- insulated structure, a plurality of Ni inner electrodes and outer electrodes, wherein the Ni inner electrodes are obtained from a paste containing a powder prepared by solubilizing at least one compound containing an atom selected from the group consisting of Li, Na and K into Ni or an Ni containing compound; the Ni inner electrodes are placed in a substantially parallel manner within the ceramic block to reach to the corre- sponding opposite edges of the ceramic block alterna- tively one by one; and the outer electrodes are elec- trically connected to the corresponding edges of the inner electrodes, respectively.

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