Large area, uniformly low dislocation density gan substrate...

Details Large area, uniformly low dislocation density gan substrate... Large area, uniformly low dislocation density gan substrate...

C - Chemistry, Metallurgy

30

B

C30B 23/00 (2006.01) B32B 9/00 (2006.01) C23C 14/00 (2006.01) C30B 25/02 (2006.01) C30B 29/40 (2006.01)

Patent

CA 2544878

Large area, uniformly low dislocation density single crystal III-V nitride material, e.g., gallium nitride having a large area of greater than 15 cm, a thickness of at least 1 mm, an average dislocation density not exceeding 5E5 cm-2, and a dislocation density standard deviation ratio of less than 25%. Such material can be formed on a substrate by a process including (i) a first phase of growing the III-V nitride material on the substrate under pitted growth conditions, e.g., forming pits over at least 50% of the growth surface of the III-V nitride material, wherein the pit density on the growth surface is at least 102 pits/cm2 of the growth surface, and (ii) a second phase of growing the III-V nitride material under pit-filling conditions.

L'invention concerne un matériau en nitrure III-V à cristal unique de faible densité de dislocation uniforme sur une grande surface, par exemple du nitrure de gallium présentant une grande surface supérieure à 15 cm?2¿, une épaisseur d'au moins 1 mm, une densité de dislocation moyenne n'excédant pas 5E5 cm?-2¿,? ¿et un rapport de déviation standard de densité de dislocation inférieur à 25 %. Un tel matériau peut se former sur un substrat, au moyen d'un procédé comprenant: (i) une première phase de formation du matériau en nitrure III-V sur le substrat, dans des conditions de formation de creux, par exemple par la formation de creux sur au moins 50 % de la surface de formation du matériau en nitrure III-V, la densité de creux de la surface de formation étant d'au moins 10?2¿ creux/cm?2¿ de la surface de formation, et (ii) une seconde phase de formation du matériau en nitrure III-V, dans des conditions de remplissage de creux.

Affiliated with

Also associated with

Rating

Large area, uniformly low dislocation density gan substrate... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Large area, uniformly low dislocation density gan substrate..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Large area, uniformly low dislocation density gan substrate... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-2011379