Laser ashing of polyimide for semiconductor manufacturing

H - Electricity – 01 – L

Patent

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Details

H01L 21/302 (2006.01) H01L 21/3065 (2006.01)

Patent

CA 2719927

A method for laser ashing of polyimide for a semiconductor manufacturing process using a structure, the structure comprising a supporting material attached to a semiconductor ship by a polyimide glue, includes releasing the supporting material from the polyimide glue, such that the polyimide glue remains on the semiconductor chip; and ashing the polyimide glue on the semiconductor chip using an ablating laser.

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