H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 21/302 (2006.01) H01L 21/3065 (2006.01)
Patent
CA 2719927
A method for laser ashing of polyimide for a semiconductor manufacturing process using a structure, the structure comprising a supporting material attached to a semiconductor ship by a polyimide glue, includes releasing the supporting material from the polyimide glue, such that the polyimide glue remains on the semiconductor chip; and ashing the polyimide glue on the semiconductor chip using an ablating laser.
Cadotte Maxime
Guerin Luc
Truong Van Thanh
Whiteheat Steve
Ibm Canada Limited - Ibm Canada Limitee
Wang Peter
LandOfFree
Laser ashing of polyimide for semiconductor manufacturing does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Laser ashing of polyimide for semiconductor manufacturing, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Laser ashing of polyimide for semiconductor manufacturing will most certainly appreciate the feedback.
Profile ID: LFCA-PAI-O-1588927