H - Electricity – 01 – L
Patent
H - Electricity
01
L
H01L 29/51 (2006.01) H01L 21/02 (2006.01) H01L 21/04 (2006.01) H01L 21/28 (2006.01) H01L 29/06 (2006.01) H01L 29/24 (2006.01) H01L 29/78 (2006.01) H01L 29/861 (2006.01) H01L 29/94 (2006.01)
Patent
CA 2340653
A dielectric structure is disclosed for silicon carbide-based semiconductor devices. In gated devices, the structure includes a layer of silicon carbide, a layer of silicon dioxide on the silicon carbide layer, a layer of another insulating material on the silicon dioxide layer, with the insulating material having a dielectric constant higher than the dielectric constant of silicon dioxide, and a gate contact to the insulating material. In other devices the dielectric structure forms an enhanced passivation layer or field insulator.
L'invention concerne une structure diélectrique destinée aux dispositifs semi-conducteurs à base de carbure de silicium. Dans des dispositifs à grille, la structure comprend une couche de carbure de silicium, une couche de dioxyde de silicium sur la couche de carbure de silicium, une couche d'un autre matériau isolant sur la couche de dioxyde de silicium, le matériau isolant possédant une constante diélectrique supérieure à celle du dioxyde de silicium et un contact à grille avec le matériau isolant. Dans d'autres dispositifs, la structure diélectrique forme une couche de passivation renforcée ou un isolateur de champ.
Lipkin Lori A.
Palmour John Williams
Cree Inc.
Sim & Mcburney
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