4. H - Electricity
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Lori A. Lipkin

H - Electricity – 01 – L

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Country: United States Of America

Layered dielectric on silicon carbide semiconductor structures

H - Electricity – 01 – L
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Method of fabricating an oxide layer on a silicon carbide...

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Silicon carbide cmos and method of fabrication

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Silicon carbide power mosfets having a shorting channel and...

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Profile ID: LFCA-PAI-P-1425793

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