Lithographic methods to reduce stacking fault nucleation...

Details Lithographic methods to reduce stacking fault nucleation... Lithographic methods to reduce stacking fault nucleation...

H - Electricity

01

L

H01L 21/04 (2006.01) H01L 21/20 (2006.01) H01L 21/205 (2006.01)

Patent

CA 2554408

Epitaxial silicon carbide layers are fabricated by forming features in a surface of a silicon carbide substrate having an off-axis orientation toward a crystallographic direction. The features include at least one sidewall that is orientated nonparallel (i.e., oblique or perpendicular) to the crystallographic direction. The epitaxial silicon carbide layer is then grown on the surface of the silicon carbide substrate that includes features therein.

La présente invention concerne des couches épitaxiales de carbure de silicium réalisées par formation de caractéristiques dans une surface d'un substrat en carbure de silicium présentant une orientation hors axe dans une direction cristallographique. Les caractéristiques comprennent au moins une paroi latérale qui est orientée de manière non parallèle (par exemple, de manière oblique ou perpendiculaire) à la direction cristallographique. La couche épitaxiale de carbure de silicium est ensuite développée sur la surface du substrat en carbure de silicium comprenant les caractéristiques..

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