H - Electricity – 01 – G
Patent
H - Electricity
01
G
334/22.2, 334/7.
H01G 13/00 (2006.01) H01G 4/00 (2006.01) H01G 4/30 (2006.01)
Patent
CA 1194949
ABSTRACT OF THE DISCLOSURE The present invention relates to a low cost method of fabricating capacitors within tight tolerance ranges. The method involves forming, by vapor deposition or the like, discrete electrode areas on an insulating substrate, and depositing a dielectric layer over the substrate and the areas between the electrodes. A further series of electrode are formed over the dielectric in partial registry with the first mentioned electrodes, and the substrate is thereafter diced to expose opposed edge portions of the resultant capacitors.. The capacitors are terminated preferably by a sputtering technique, the sputtered material being insulated from contact with the edge portions of non-exposed electrodes by the deposited dielectric. -21-
448197
Keller Jed V.
Ritchie Kim
Avx Corporation
Ridout & Maybee Llp
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