Low damage source and drain doping technique

Details Low damage source and drain doping technique Low damage source and drain doping technique

H - Electricity

01

L

H01L 21/385 (2006.01) H01L 21/225 (2006.01) H01L 21/336 (2006.01) H01L 21/8238 (2006.01)

Patent

CA 2225926

A process for fabricating a source and drain region which includes a more lightly doped source and drain tip region (40) immediately adjacent to the gate (11) and a more heavily doped main portion (41) of the source and drain region spaced apart from the gate. A first layer (16) of glass (2 % BSG) is used to provide the source of doping for the tip region and a second layer (35) of glass (6 % BSG) is used to provide the dopant for the more heavily doped major portion of source and drain regions. Spacers (30, 31) are formed between the glass layers to define the tip region from the main portion of the source and drain regions.

Procédé de production d'une région de source et de drain dans laquelle une région d'extrémité de source et de drain plus faiblement dopée (40) est prévue juste à côté de la grille (11), et une partie principale de la région de source et de drain plus fortement dopée (41) est espacée de la grille. On utilise une première couche (16) de verre (2 % de verre de borosilicate) comme source de dopage pour la région d'extrémité et une deuxième couche (35) de verre (6 % de verre de borosilicate) comme agent de dopage pour la partie principale fortement dopée des régions de source et de drain. Des éléments d'espacement (30, 31) sont formés entre les couches de verre pour distinguer la région d'extrémité de la partie principale des régions de source et de drain.

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