Low firing temperature thick film dielectric layer for...

H - Electricity – 05 – B

Patent

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Details

H05B 33/10 (2006.01) C03C 8/14 (2006.01) C03C 8/16 (2006.01) C03C 8/20 (2006.01) H05B 33/14 (2006.01) H05B 33/22 (2006.01)

Patent

CA 2469508

The present invention is a low firing temperature, composite thick film dielectric layer for an electroluminescent display. The composite thick film dielectric layer comprises; (a) a lower zone layer of a thick film composition comprising; one or more of lead magnesium niobate (PMN), lead magnesium niobate-titanate (PMN-PT), lead titanate, barium titanate and lead oxide; and a glass frit composition comprising lead oxide, boron oxide and silicon dioxide; (b) an upper zone comprising at least one layer of lead zirconate titanate (PZT) and/or barium titanate; and (c) an intermediate composite zone comprising a composite of (a) and (b).

La présente invention concerne une couche diélectrique d'un film épais composite à basse température d'allumage pour un écran électroluminescent. Cette couche diélectrique comprend (a) une couche, dans une zone inférieure, d'une composition de film épais comprenant l'un ou plusieurs des éléments parmi lesquels du plomb magnésium-niobate (PMN), du plomb magnésium niobate titanate (PMN-PT), du titanate de plomb, du titanate de baryum et de l'oxyde de plomb; et une composition de fritte de verre comprenant de l'oxyde de plomb, de l'oxyde de bore et du dioxyde de silicium; (b) une zone supérieure présentant au moins une couche de titanate-zirconate de plomb (PZT) et/ou de titanate de baryum; et (c) une zone composite intermédiaire comprenant un matériau composite regroupant (a) et (b).

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