Magnesium titanate ceramic and dual dielectric substrate...

H - Electricity – 01 – G

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H01G 4/12 (2006.01) B32B 18/00 (2006.01) C04B 35/46 (2006.01) C04B 35/465 (2006.01) H01B 3/12 (2006.01) H01G 4/20 (2006.01) H01L 23/15 (2006.01) H05K 1/16 (2006.01) H05K 1/03 (2006.01) H05K 1/09 (2006.01) H05K 3/46 (2006.01)

Patent

CA 1331279

A MAGNESIUM TITANATE CERAMIC AND DUAL DIELECTRIC SUBSTRATE USING SAME Abstract of the Disclosure The average chemical composition of a reaction band at the interface adjacent co-sintered layers of barium titanate and a low K magnesium zinc titanate is bound to be Mg0.5Ba0,25Zn0.25TiO3. That magnesium barium zinc titanate is compatible physically and chemically with barium titanate when the two are made adjacent in the green state and are themselves subsequently co-sintered. The preferred structure for use as a printed-wiring substrate capable of containing surface and buried capacitors and resistors is a stack having a barium titanate layer sandwiched between two magnesium barium zinc titanate layers. The ratio of the dielectric constants (K) of the two materials exceeds 100. Thus, there is the possibility for making large value capacitors buried in the high K barium titanate while there is little capacitance and cross-talk between conductors in the outer low K material layers.

605974

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