G - Physics – 11 – B
Patent
G - Physics
11
B
352/32.4
G11B 5/62 (2006.01) G11B 5/84 (2006.01) G11B 7/24 (2006.01) G11B 7/26 (2006.01) G11B 11/105 (2006.01) H01F 10/12 (2006.01) H01F 10/14 (2006.01)
Patent
CA 1224270
ABSTRACT OF THE DISCLOSURE A magneto-optic memory element is disclosed which includes in sequence a transparent substrate, a first trans- parent nitride film, a GdTbFe recording layer, a second transparent nitride film, and a reflection film. The first transparent nitride film has an index of refraction higher than that of the second transparent nitride film. In a preferred form, the first transparent nitride film is a SiN film having an index of refraction of about 2.0, and the second transparent nitride film is an AlN film having an index of refraction of about 1.8 to 1.9.
462506
Hirokane Junji
Katayama Hiroyuki
Murakami Yoshiteru
Ohta Kenji
Takahashi Akira
G. Ronald Bell & Associates
Sharp Kabushiki Kaisha
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