Magnetron reactive bias sputtering method and apparatus

Details Magnetron reactive bias sputtering method and apparatus Magnetron reactive bias sputtering method and apparatus

C - Chemistry, Metallurgy

23

C

204/96.08, 204/1

C23C 14/34 (2006.01) H01J 37/34 (2006.01)

Patent

CA 1204700

28. ABSTRACT OF THE DISCLOSURE The film deposition rate of metallic compounds onto a substrate in a vacuum chamber by reactive sputtering or reactive ion plating is significantly increased by providing a substrate support with spaced apart magnetic poles to create a magnetic field having lines of force which leave the support, extend across a surface of the substrate exposed to a metallic coating source and re-enter the support to enclose the exposed surface in a localized magnetic electron-trapping field. A reactive gas is fed into the chamber, and a bias voltage is applied to the substrate support sufficient to create a dense glow discharge of ionized reactive gas closely adjacent to the substrate surface. The reactive gas ions react with metallic particles deposited on the exposed substrate surface from the coating source to form a film of the desired metallic compound. The localized magnetic plasma trap close to the substrate increases the chemical reaction rate at the substrate and reduces back sputtering, to result in a metallic compound coating having superior physical and chemical characteristics.

420138

Affiliated with

Also associated with

Rating

Magnetron reactive bias sputtering method and apparatus does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Magnetron reactive bias sputtering method and apparatus, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magnetron reactive bias sputtering method and apparatus will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFCA-PAI-O-1219788